Caratteristiche Tecniche:

JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
533MHz fCK for 1066Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 6,7,8,9,10
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
On-DIMM thermal sensor (Grade B)
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
PERFORMANCE:
CL(IDD) 7 cycles
Row Cycle Time (tRCmin) 50.625ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 110ns (min.)
Row Active Time (tRASmin) 37.5ns (min.)
Power 2.452 W (operating per module)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C